Технічний опис DMN3060LWQ-13 Diodes Inc
Description: MOSFET BVDSS: 25V~30V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V.
Інші пропозиції DMN3060LWQ-13
| Фото | Назва | Виробник | Інформація |
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DMN3060LWQ-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.1A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 640mW Polarisation: unipolar Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 18A Mounting: SMD Case: SOT323 кількість в упаковці: 10000 шт |
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| DMN3060LWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V |
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| DMN3060LWQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SOT323 T&R 10K |
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DMN3060LWQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.1A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 640mW Polarisation: unipolar Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 18A Mounting: SMD Case: SOT323 |
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