DMN3061S-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 770mW (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).