DMN3061SVT-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 3.4A TSOT26, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 880mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).