DMN3066LQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 810mW (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).