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| 17+ | 19.33 грн |
| 100+ | 9.42 грн |
| 500+ | 7.10 грн |
| 1000+ | 6.19 грн |
| 3000+ | 5.42 грн |
| 5000+ | 4.50 грн |
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Технічний опис DMN3071LFR4-7 Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A 3DFN, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: X2-DFN1010-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 500mW, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel.
Інші пропозиції DMN3071LFR4-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN3071LFR4-7 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 3.4A 3DFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: X2-DFN1010-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel |
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| DMN3071LFR4-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X2-DFN1010-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 30V 3.4A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X2-DFN1010-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
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