DMN3071LFR4-7R Diodes Incorporated

Description: MOSFET N-CH 30V 3.4A 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: X2-DFN1010-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 500mW, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).