DMN30H14DLY-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 300V 210MA SOT89
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-89-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Технічний опис DMN30H14DLY-13 Diodes Incorporated
Description: MOSFET N-CH 300V 210MA SOT89, Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-89-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції DMN30H14DLY-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN30H14DLY-13 | Diodes Incorporated |
MOSFETs 300V N-Ch Enh Mode 20Vgss 96pF 4nC |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN30H14DLY-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 Gate-source voltage: ±20V Drain-source voltage: 300V Gate charge: 4nC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT89 Polarisation: unipolar Kind of package: 13 inch reel; tape Drain current: 0.16A On-state resistance: 20Ω Power dissipation: 2.2W Pulsed drain current: 1A |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN30H14DLY-13 |
|
Виробник: Diodes Incorporated
MOSFETs 300V N-Ch Enh Mode 20Vgss 96pF 4nC
MOSFETs 300V N-Ch Enh Mode 20Vgss 96pF 4nC
товару немає в наявності
В кошику
од. на суму грн.
| DMN30H14DLY-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
товару немає в наявності
В кошику
од. на суму грн.