Технічний опис DMN30H14DLY-13 Diodes Inc
Description: MOSFET N-CH 300V 210MA SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 300mA, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-89-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 25 V.
Інші пропозиції DMN30H14DLY-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN30H14DLY-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89 Drain-source voltage: 300V Drain current: 0.16A кількість в упаковці: 2500 шт |
товару немає в наявності |
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DMN30H14DLY-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 300V 210MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 300mA, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 25 V |
товару немає в наявності |
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DMN30H14DLY-13 | Виробник : Diodes Incorporated |
MOSFETs 300V N-Ch Enh Mode 20Vgss 96pF 4nC |
товару немає в наявності |
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| DMN30H14DLY-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89 Drain-source voltage: 300V Drain current: 0.16A |
товару немає в наявності |