DMN30H4D0L-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 300V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.24 грн |
| 6000+ | 12.59 грн |
| 9000+ | 12.01 грн |
| 15000+ | 10.67 грн |
| 21000+ | 10.36 грн |
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Технічний опис DMN30H4D0L-7 Diodes Incorporated
Description: MOSFET N-CH 300V 250MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 310mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V.
Інші пропозиції DMN30H4D0L-7 за ціною від 14.96 грн до 59.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMN30H4D0L-7 | Diodes Incorporated |
Description: MOSFET N-CH 300V 250MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 163650 шт: термін постачання 21-31 дні (днів) |
|
| DMN30H4D0L-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 300V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 300V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 163650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.67 грн |
| 10+ | 35.74 грн |
| 100+ | 23.13 грн |
| 500+ | 16.60 грн |
| 1000+ | 14.96 грн |