Технічний опис DMN30H4D1S-13 Diodes Incorporated
Description: MOSFET N-CH 300V 430MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 360mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DMN30H4D1S-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN30H4D1S-13 | Diodes Incorporated |
Description: MOSFET N-CH 300V 430MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN30H4D1S-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT223 Polarisation: unipolar Kind of package: 13 inch reel; tape Drain current: 2A On-state resistance: 0.25Ω Power dissipation: 1.69W Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN30H4D1S-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 300V 430MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 300V 430MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMN30H4D1S-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
товару немає в наявності
В кошику
од. на суму грн.