DMN30H4D1S-7 Diodes Incorporated
на замовлення 5900 шт:
термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис DMN30H4D1S-7 Diodes Incorporated
Description: MOSFET N-CH 300V 430MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V.
Інші пропозиції DMN30H4D1S-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN30H4D1S-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Case: SOT223 Drain current: 2A On-state resistance: 0.25Ω Power dissipation: 1.69W Pulsed drain current: 6A Mounting: SMD Type of transistor: N-MOSFET Drain-source voltage: 60V Kind of channel: enhancement Kind of package: 7 inch reel; tape Polarisation: unipolar кількість в упаковці: 5 шт |
товару немає в наявності |
||
 |
DMN30H4D1S-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 300V 430MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V |
товару немає в наявності |
|
| DMN30H4D1S-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Case: SOT223 Drain current: 2A On-state resistance: 0.25Ω Power dissipation: 1.69W Pulsed drain current: 6A Mounting: SMD Type of transistor: N-MOSFET Drain-source voltage: 60V Kind of channel: enhancement Kind of package: 7 inch reel; tape Polarisation: unipolar |
товару немає в наявності |