DMN3110S-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 3000+ | 13.31 грн |
| 6000+ | 11.77 грн |
| 9000+ | 11.24 грн |
| 15000+ | 9.98 грн |
| 21000+ | 9.73 грн |
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Технічний опис DMN3110S-7 Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V.
Інші пропозиції DMN3110S-7 за ціною від 11.81 грн до 57.75 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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DMN3110S-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 SOT23,3K |
на замовлення 9643 шт: термін постачання 21-30 дні (днів) |
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DMN3110S-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V |
на замовлення 726619 шт: термін постачання 21-31 дні (днів) |
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| DMN3110S-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30 SOT23,3K
MOSFETs MOSFET BVDSS: 25V-30 SOT23,3K
на замовлення 9643 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.81 грн |
| 12+ | 27.90 грн |
| 100+ | 17.51 грн |
| 500+ | 15.47 грн |
| 1000+ | 12.80 грн |
| 3000+ | 11.81 грн |
| DMN3110S-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
на замовлення 726619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 34.44 грн |
| 100+ | 22.28 грн |
| 500+ | 15.99 грн |
| 1000+ | 14.41 грн |