Технічний опис DMN3115UDMQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26, Application: automotive industry, Case: SOT26, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, On-state resistance: 0.13Ω, Power dissipation: 0.9W, Drain current: 3.2A, Gate-source voltage: ±8V, Pulsed drain current: 12.8A, Drain-source voltage: 30V, Kind of package: 13 inch reel; tape.
Інші пропозиції DMN3115UDMQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN3115UDMQ-13 | Виробник : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 25V-30V SOT26 T&R 10K |
товару немає в наявності |
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DMN3115UDMQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Application: automotive industry Case: SOT26 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 0.13Ω Power dissipation: 0.9W Drain current: 3.2A Gate-source voltage: ±8V Pulsed drain current: 12.8A Drain-source voltage: 30V Kind of package: 13 inch reel; tape |
товару немає в наявності |