| Кількість | Ціна |
|---|---|
| 7+ | 48.65 грн |
| 12+ | 29.36 грн |
| 100+ | 16.39 грн |
| 500+ | 12.45 грн |
| 1000+ | 10.34 грн |
| 3000+ | 9.14 грн |
| 6000+ | 7.17 грн |
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Технічний опис DMN3270UVT-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.6A TSOT26, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 900mV @ 40µA, Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V, Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 760mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3270UVT-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN3270UVT-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 1.6A TSOT26Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 40µA Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 760mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMN3270UVT-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 760mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 760mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.