DMN32D4SDW-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.65A SOT363, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 650mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 290mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).