DMN33D8LVQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 4.81 грн |
| 30000+ | 4.54 грн |
| 50000+ | 3.76 грн |
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Технічний опис DMN33D8LVQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.35A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 430mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN33D8LVQ-13 за ціною від 4.94 грн до 32.55 грн
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DMN33D8LVQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 169863 шт: термін постачання 21-31 дні (днів) |
|
| DMN33D8LVQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 169863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 14+ | 21.79 грн |
| 100+ | 10.99 грн |
| 500+ | 8.42 грн |
| 1000+ | 6.25 грн |
| 2000+ | 5.25 грн |
| 5000+ | 4.94 грн |