Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement

Виробник: Diodes Zetex
Trans MOSFET N-CH 30V 0.35A 6-Pin SOT-563 T/R

Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 100µA
Supplier Device Package: SOT-563

Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V 30V SOT563 T&R 10K