DMN3401LDW-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.14 грн |
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Технічний опис DMN3401LDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 290mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3401LDW-7 за ціною від 4.08 грн до 25.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMN3401LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2999 шт: термін постачання 14-30 дні (днів) |
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DMN3401LDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.8A SOT363 Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) |
на замовлення 7520 шт: термін постачання 21-31 дні (днів) |
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DMN3401LDW-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 5393 шт: термін постачання 21-30 дні (днів) |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2999 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.79 грн |
| 32+ | 13.37 грн |
| 100+ | 8.10 грн |
| 500+ | 5.93 грн |
| 1000+ | 5.25 грн |
| DMN3401LDW-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT363
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Description: MOSFET 2N-CH 30V 0.8A SOT363
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
на замовлення 7520 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 21+ | 14.70 грн |
| 100+ | 9.23 грн |
| 500+ | 6.43 грн |
| 1000+ | 5.71 грн |
| DMN3401LDW-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
на замовлення 5393 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.43 грн |
| 21+ | 15.53 грн |
| 100+ | 8.51 грн |
| 500+ | 6.33 грн |
| 1000+ | 5.56 грн |
| 3000+ | 4.57 грн |
| 6000+ | 4.08 грн |