DMN3401LVQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.18 грн |
| 6000+ | 3.62 грн |
| 9000+ | 3.41 грн |
| 15000+ | 2.99 грн |
| 21000+ | 2.86 грн |
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Технічний опис DMN3401LVQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1.6V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 490mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3401LVQ-7 за ціною від 4.66 грн до 20.57 грн
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DMN3401LVQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.8A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 29975 шт: термін постачання 21-31 дні (днів) |
|
| DMN3401LVQ-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.8A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 29975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.57 грн |
| 25+ | 12.19 грн |
| 100+ | 7.60 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.66 грн |