DMN3731UFB4-7B Diodes Incorporated

Description: MOSFET N-CH 30V 1.2A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V.