DMN3732UFB4Q-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
| Кількість | Ціна |
|---|---|
| 10000+ | 3.29 грн |
| 30000+ | 3.11 грн |
| 50000+ | 2.80 грн |
| 100000+ | 2.33 грн |
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Технічний опис DMN3732UFB4Q-7B Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 490mW (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V.
Інші пропозиції DMN3732UFB4Q-7B за ціною від 2.67 грн до 25.93 грн
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DMN3732UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN1006 Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: X2-DFN1006-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V |
на замовлення 147252 шт: термін постачання 21-31 дні (днів) |
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| DMN3732UFB4Q-7B | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K |
на замовлення 4652 шт: термін постачання 21-30 дні (днів) |
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| DMN3732UFB4Q-7B |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
на замовлення 147252 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 19+ | 16.84 грн |
| 100+ | 8.21 грн |
| 500+ | 6.42 грн |
| 1000+ | 4.46 грн |
| 2000+ | 3.87 грн |
| 5000+ | 3.53 грн |
| DMN3732UFB4Q-7B |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
на замовлення 4652 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.93 грн |
| 19+ | 17.55 грн |
| 100+ | 9.70 грн |
| 1000+ | 4.29 грн |
| 2500+ | 3.80 грн |
| 10000+ | 2.81 грн |
| 20000+ | 2.67 грн |