DMN3900UFA-7B Diodes Incorporated

Description: MOSFET N-CH 30V 550MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 760mOhm @ 200mA, 4.5V, Power Dissipation (Max): 390mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42.2 pF @ 25 V.