DMN4027SSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
| Кількість | Ціна |
|---|---|
| 4+ | 87.85 грн |
| 10+ | 53.10 грн |
| 100+ | 35.07 грн |
| 500+ | 25.65 грн |
| 1000+ | 23.31 грн |
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Технічний опис DMN4027SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V, Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції DMN4027SSD-13 за ціною від 19.80 грн до 91.11 грн
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DMN4027SSD-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A |
на замовлення 4743 шт: термін постачання 21-30 дні (днів) |
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DMN4027SSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
товару немає в наявності |