DMN4031SSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Кількість | Ціна |
|---|---|
| 7+ | 49.49 грн |
| 10+ | 41.00 грн |
| 100+ | 30.58 грн |
| 500+ | 22.55 грн |
| 1000+ | 17.43 грн |
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Технічний опис DMN4031SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.42W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.2A, Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V, Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMN4031SSD-13 за ціною від 11.24 грн до 65.17 грн
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DMN4031SSD-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40 SO-8,2.5K |
на замовлення 9611 шт: термін постачання 21-30 дні (днів) |
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DMN4031SSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |