Технічний опис DMN4031SSDQ-13 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8, Kind of package: 13 inch reel; tape, Mounting: SMD, Case: SO8, Polarisation: unipolar, Gate charge: 18.6nC, On-state resistance: 50mΩ, Power dissipation: 2.6W, Drain current: 5.6A, Gate-source voltage: ±20V, Pulsed drain current: 40A, Drain-source voltage: 40V, Application: automotive industry, Kind of channel: enhancement, Type of transistor: N-MOSFET x2.
Інші пропозиції DMN4031SSDQ-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMN4031SSDQ-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 40V 5.2A 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
DMN4031SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.2A 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMN4031SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Kind of package: 13 inch reel; tape Mounting: SMD Case: SO8 Polarisation: unipolar Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 40V Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN4031SSDQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SOIC
Description: MOSFET 2N-CH 40V 5.2A 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
| DMN4031SSDQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SOIC
Description: MOSFET 2N-CH 40V 5.2A 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
| DMN4031SSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику
од. на суму грн.