DMN52D0UVT-13 Diodes Incorporated

Description: MOSFET 2N-CH 50V 0.43A TSOT26, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Drain to Source Voltage (Vdss): 50V, Power - Max: 500µW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).