DMN52D0UVTQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V TSOT26 T&R, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Drain to Source Voltage (Vdss): 50V, Power - Max: 500mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).