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Технічний опис DMN5L06DMK-7 Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.305A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 305mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26.
Інші пропозиції DMN5L06DMK-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN5L06DMK-7 | Diodes |
 MOSFET 2N-CH 50V 0.305A SOT-26 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
DMN5L06DMK-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.305A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
DMN5L06DMK-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.305A SOT26 Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Current - Continuous Drain (Id) @ 25°C: 305mA Drain to Source Voltage (Vdss): 50V Power - Max: 400mW Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN5L06DMK-7 |
|
Виробник: Diodes
MOSFET 2N-CH 50V 0.305A SOT-26 Транзистори
MOSFET 2N-CH 50V 0.305A SOT-26 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| DMN5L06DMK-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.305A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Description: MOSFET 2N-CH 50V 0.305A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
товару немає в наявності
В кошику
од. на суму грн.
| DMN5L06DMK-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.305A SOT26
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 50V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 50V 0.305A SOT26
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 50V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.