DMN6010SCTBQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V TO263 T&R, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-263AB (D2PAK), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 5W (Ta), 312W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).