DMN6013LFGQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 10.3A PWRDI3333, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.