DMN6013LFGQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.68 грн |
| 6000+ | 20.69 грн |
| 9000+ | 19.16 грн |
| 30000+ | 17.8 грн |
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Технічний опис DMN6013LFGQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN6013LFGQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMN6013LFGQ-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 60V 10.3A Automotive 8-Pin PowerDI EP T/R |
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| DMN6013LFGQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.3A Pulsed drain current: 58.3A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 55.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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DMN6013LFGQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
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| DMN6013LFGQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.3A Pulsed drain current: 58.3A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 55.4nC Kind of package: reel; tape Kind of channel: enhanced |
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