DMN601TKQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: 2N7002 FAMILY SOT523 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 343mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.61 грн |
| 6000+ | 3.12 грн |
| 9000+ | 2.94 грн |
| 15000+ | 2.57 грн |
| 21000+ | 2.46 грн |
| 30000+ | 2.35 грн |
| 75000+ | 2.07 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN601TKQ-7 Diodes Incorporated
Description: 2N7002 FAMILY SOT523 T&R 3K, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 343mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-523, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMN601TKQ-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DMN601TKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Gate charge: 0.51nC Drain current: 343mA Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMN601TKQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Gate charge: 0.51nC
Drain current: 343mA
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Gate charge: 0.51nC
Drain current: 343mA
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.