DMN6040SFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.24 грн |
| 6000+ | 13.50 грн |
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Технічний опис DMN6040SFDE-7 Diodes Incorporated
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 2.03W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: U-DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.03ohm.
Інші пропозиції DMN6040SFDE-7 за ціною від 15.98 грн до 62.77 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMN6040SFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 0.66W Case: U-DFN2020-6 Type E Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 700 шт: термін постачання 14-30 дні (днів) |
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DMN6040SFDE-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 5.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V |
на замовлення 7469 шт: термін постачання 21-31 дні (днів) |
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DMN6040SFDE-7 | DIODES INC. |
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 2.03W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.03ohm |
на замовлення 2540 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMN6040SFDE-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K |
на замовлення 75080 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMN6040SFDE-7 | DIODES INC. |
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 2.03W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.03ohm |
на замовлення 2540 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| DMN6040SFDE-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.66W
Case: U-DFN2020-6 Type E
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 30A; 0.66W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 0.66W
Case: U-DFN2020-6 Type E
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 700 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.36 грн |
| 14+ | 31.84 грн |
| 100+ | 21.14 грн |
| 400+ | 16.91 грн |
| 500+ | 16.33 грн |
| DMN6040SFDE-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Description: MOSFET N-CH 60V 5.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
на замовлення 7469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 37.91 грн |
| 100+ | 24.61 грн |
| 500+ | 17.71 грн |
| 1000+ | 15.98 грн |
| DMN6040SFDE-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.03W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.03ohm
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.03W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.03ohm
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)
| DMN6040SFDE-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
MOSFETs MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
на замовлення 75080 шт:
термін постачання 21-30 дні (днів)
| DMN6040SFDE-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.03W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.03ohm
Description: DIODES INC. - DMN6040SFDE-7 - Leistungs-MOSFET, n-Kanal, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.03W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.03ohm
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)