DMN6068SEQ-13 DIODES INC.
Виробник: DIODES INC.
Description: DIODES INC. - DMN6068SEQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.068 ohm, SOT-223, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.068ohm
SVHC: Lead (23-Jan-2024)
| Кількість | Ціна |
|---|---|
| 100+ | 27.78 грн |
| 500+ | 21.60 грн |
| 1000+ | 13.57 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN6068SEQ-13 DIODES INC.
Description: MOSFET BVDSS: 41V~60V SOT223 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMN6068SEQ-13 за ціною від 13.57 грн до 53.39 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN6068SEQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMN6068SEQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.068 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: Lead (23-Jan-2024) |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
DMN6068SEQ-13 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 60V 4.1A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
товару немає в наявності |
|||||||||||||
 |
DMN6068SEQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&R Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
|||||||||||||
|
|
DMN6068SEQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&R Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
|||||||||||||
 |
DMN6068SEQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS 41V-60V |
товару немає в наявності |
|||||||||||||
| DMN6068SEQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 20.8A Power dissipation: 3.7W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |