DMN6069SE-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 4.3A/10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 10.86 грн |
| 5000+ | 10.32 грн |
| 7500+ | 10.15 грн |
| 12500+ | 9.51 грн |
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Технічний опис DMN6069SE-13 Diodes Incorporated
Description: MOSFET N-CH 60V 4.3A/10A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMN6069SE-13 за ціною від 9.99 грн до 28.96 грн
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DMN6069SE-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 4.3A/10A SOT223 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 228699 шт: термін постачання 21-31 дні (днів) |
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DMN6069SE-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V SOT223 T&R 2.5K |
на замовлення 12567 шт: термін постачання 21-30 дні (днів) |
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| DMN6069SE-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 4.3A/10A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 4.3A/10A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 228699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 14+ | 22.78 грн |
| 100+ | 15.52 грн |
| 500+ | 14.29 грн |
| 1000+ | 12.65 грн |
| DMN6069SE-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V SOT223 T&R 2.5K
MOSFETs MOSFET BVDSS: 41V-60V SOT223 T&R 2.5K
на замовлення 12567 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.96 грн |
| 14+ | 24.67 грн |
| 100+ | 13.43 грн |
| 500+ | 11.74 грн |
| 1000+ | 11.18 грн |
| 2500+ | 9.99 грн |