DMN6069SFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 18.21 грн |
| 6000+ | 16.40 грн |
| 10000+ | 15.27 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN6069SFG-7 Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 930mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN6069SFG-7 за ціною від 12.52 грн до 51.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN6069SFG-7 | Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 60Vgss 25A Idm |
на замовлення 3478 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
DMN6069SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 5.6A POWERDI333Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 38230 шт: термін постачання 21-31 дні (днів) |
|
| DMN6069SFG-7 |
![]() |
Виробник: Diodes Incorporated
MOSFETs 60V N-Ch Enh FET 60Vgss 25A Idm
MOSFETs 60V N-Ch Enh FET 60Vgss 25A Idm
на замовлення 3478 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.08 грн |
| 10+ | 35.26 грн |
| 100+ | 21.03 грн |
| 500+ | 16.60 грн |
| 1000+ | 15.19 грн |
| 2000+ | 12.52 грн |
| DMN6069SFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 5.6A POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 38230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.43 грн |
| 10+ | 42.44 грн |
| 100+ | 31.67 грн |
| 500+ | 23.35 грн |
| 1000+ | 18.05 грн |



