DMN6069SFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 17.71 грн |
| 6000+ | 15.96 грн |
| 10000+ | 14.86 грн |
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Технічний опис DMN6069SFG-7 Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 930mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN6069SFG-7 за ціною від 17.56 грн до 50.03 грн
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DMN6069SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 5.6A POWERDI333 Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 38230 шт: термін постачання 21-31 дні (днів) |
|
| DMN6069SFG-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 5.6A POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 38230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.03 грн |
| 10+ | 41.29 грн |
| 100+ | 30.81 грн |
| 500+ | 22.72 грн |
| 1000+ | 17.56 грн |