Інші пропозиції DMN6070SFCL-7 за ціною від 7.75 грн до 39.55 грн
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DMN6070SFCL-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 3A X1-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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DMN6070SFCL-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 3A X1-DFN1616-6 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
на замовлення 56754 шт: термін постачання 21-31 дні (днів) |
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DMN6070SFCL-7 | Diodes Incorporated |
MOSFETs N-Ch 31V to 99V 60V 120mOhm 606pF |
на замовлення 4610 шт: термін постачання 21-30 дні (днів) |
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| DMN6070SFCL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.70 грн |
| 6000+ | 9.66 грн |
| 9000+ | 9.28 грн |
| 15000+ | 8.54 грн |
| 21000+ | 7.93 грн |
| 30000+ | 7.75 грн |
| DMN6070SFCL-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
на замовлення 56754 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.77 грн |
| 12+ | 27.43 грн |
| 100+ | 18.71 грн |
| 500+ | 13.36 грн |
| 1000+ | 12.00 грн |
| DMN6070SFCL-7 |
|
Виробник: Diodes Incorporated
MOSFETs N-Ch 31V to 99V 60V 120mOhm 606pF
MOSFETs N-Ch 31V to 99V 60V 120mOhm 606pF
на замовлення 4610 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.55 грн |
| 12+ | 28.63 грн |
| 100+ | 17.37 грн |
| 500+ | 13.15 грн |
| 1000+ | 11.67 грн |
| 3000+ | 10.69 грн |
| 6000+ | 8.79 грн |