DMN6075SQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).