DMN60H080DS-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.56 грн |
| 6000+ | 4.89 грн |
| 9000+ | 4.66 грн |
| 15000+ | 4.12 грн |
| 21000+ | 3.97 грн |
| 30000+ | 3.83 грн |
| 75000+ | 3.70 грн |
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Технічний опис DMN60H080DS-7 Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V, Current - Continuous Drain (Id) @ 25°C: 80mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DMN60H080DS-7 за ціною від 5.86 грн до 20.92 грн
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DMN60H080DS-7 | Diodes Incorporated |
Description: MOSFET N-CH 600V 80MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80mA (Ta) Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V |
на замовлення 83459 шт: термін постачання 21-31 дні (днів) |
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DMN60H080DS-7 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 501V-650V |
на замовлення 25704 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN60H080DS-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Description: MOSFET N-CH 600V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
на замовлення 83459 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| 23+ | 13.36 грн |
| 100+ | 9.00 грн |
| 500+ | 6.51 грн |
| 1000+ | 5.86 грн |
| DMN60H080DS-7 |
|
Виробник: Diodes Incorporated
MOSFET MOSFETBVDSS: 501V-650V
MOSFET MOSFETBVDSS: 501V-650V
на замовлення 25704 шт:
термін постачання 21-30 дні (днів)