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Технічний опис DMN61D8L-7 Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 470mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Power Dissipation (Max): 390mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V.
Інші пропозиції DMN61D8L-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DMN61D8L-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 470MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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DMN61D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 470MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMN61D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.37A; 0.39W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.37A Power dissipation: 0.39W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMN61D8L-7 | Diodes Zetex |
Trans MOSFET N-CH 60V 0.47A 3-Pin SOT-23 T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMN61D8L-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN61D8L-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN61D8L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.37A; 0.39W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 0.39W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.37A; 0.39W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 0.39W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| DMN61D8L-7 |
|
Виробник: Diodes Zetex
Trans MOSFET N-CH 60V 0.47A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.47A 3-Pin SOT-23 T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.