DMN61D8LQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 3000+ | 11.37 грн |
| 6000+ | 10.03 грн |
| 9000+ | 9.56 грн |
| 15000+ | 8.48 грн |
| 21000+ | 8.18 грн |
| 30000+ | 8.05 грн |
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Технічний опис DMN61D8LQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 390mW (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Current - Continuous Drain (Id) @ 25°C: 470mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції DMN61D8LQ-7 за ціною від 9.78 грн до 50.28 грн
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DMN61D8LQ-7 | Виробник : Diodes Incorporated |
MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW |
на замовлення 20490 шт: термін постачання 21-30 дні (днів) |
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DMN61D8LQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 470MA SOT23 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 390mW (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 130961 шт: термін постачання 21-31 дні (днів) |
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