DMN61D8LVT-7 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Polarisation: unipolar
Gate charge: 740pC
Power dissipation: 1.09W
Drain current: 0.5A
On-state resistance: 2.4Ω
Gate-source voltage: ±12V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Case: TSOT26
Kind of channel: enhancement
Type of transistor: N-MOSFET
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.11 грн |
| 13+ | 32.92 грн |
| 30+ | 25.79 грн |
| 100+ | 19.48 грн |
| 500+ | 13.93 грн |
| 1000+ | 12.35 грн |
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Технічний опис DMN61D8LVT-7 DIODES INCORPORATED
Description: MOSFET 2N-CH 60V 0.63A TSOT26, Vgs(th) (Max) @ Id: 2V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V, Current - Continuous Drain (Id) @ 25°C: 630mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 820mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSOT-26.
Інші пропозиції DMN61D8LVT-7 за ціною від 12.84 грн до 51.92 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMN61D8LVT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.63A TSOT26 Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 2V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Current - Continuous Drain (Id) @ 25°C: 630mA Drain to Source Voltage (Vdss): 60V Power - Max: 820mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
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DMN61D8LVT-7 | Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 |
на замовлення 3795 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN61D8LVT-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 820mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 820mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 30.97 грн |
| 100+ | 19.94 грн |
| 500+ | 14.27 грн |
| 1000+ | 12.84 грн |
| DMN61D8LVT-7 |
|
Виробник: Diodes Incorporated
MOSFET 60V N-Ch Enh FET 20Vgss TSOT26
MOSFET 60V N-Ch Enh FET 20Vgss TSOT26
на замовлення 3795 шт:
термін постачання 21-30 дні (днів)