DMN61D8LVTQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
| Кількість | Ціна |
|---|---|
| 3000+ | 9.61 грн |
| 6000+ | 8.45 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN61D8LVTQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 820mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 630mA, Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSOT-26, Part Status: Active.
Інші пропозиції DMN61D8LVTQ-7 за ціною від 8.45 грн до 43.26 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN61D8LVTQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.63A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 6870 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DMN61D8LVTQ-7 | Виробник : Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 41 to 60V Low Rdson |
на замовлення 6323 шт: термін постачання 21-30 дні (днів) |
|