DMN62D0LFD-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 15+ | 21.91 грн |
| 23+ | 14.64 грн |
| 100+ | 8.02 грн |
| 500+ | 4.99 грн |
| 1000+ | 3.87 грн |
| 2500+ | 3.45 грн |
| 5000+ | 2.95 грн |
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Технічний опис DMN62D0LFD-13 Diodes Incorporated
Description: MOSFET N-CH X1-DFN1212-3, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Obsolete, Supplier Device Package: X1-DFN1212-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 480mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V.
Інші пропозиції DMN62D0LFD-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN62D0LFD-13 | Diodes Incorporated |
Description: MOSFET N-CH X1-DFN1212-3 Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Obsolete Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| DMN62D0LFD-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH X1-DFN1212-3
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Obsolete
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Description: MOSFET N-CH X1-DFN1212-3
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Obsolete
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.