DMN62D0LFD-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.68 грн |
| 6000+ | 3.17 грн |
| 9000+ | 2.98 грн |
| 15000+ | 2.59 грн |
| 21000+ | 2.47 грн |
| 30000+ | 2.36 грн |
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Технічний опис DMN62D0LFD-7 Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Active, Supplier Device Package: X1-DFN1212-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 480mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN62D0LFD-7 за ціною від 4.96 грн до 24.53 грн
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DMN62D0LFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 3-UDFN Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
на замовлення 89237 шт: термін постачання 21-31 дні (днів) |
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DMN62D0LFD-7 | Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss |
на замовлення 19456 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN62D0LFD-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 310MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 89237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 22+ | 13.94 грн |
| 27+ | 11.40 грн |
| 100+ | 7.93 грн |
| 250+ | 6.58 грн |
| 500+ | 5.74 грн |
| 1000+ | 4.96 грн |
| DMN62D0LFD-7 |
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Виробник: Diodes Incorporated
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
на замовлення 19456 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.