DMN62D0U-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.03 грн |
| 30000+ | 2.87 грн |
| 50000+ | 2.58 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN62D0U-13 Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 380mW (Ta).
Інші пропозиції DMN62D0U-13 за ціною від 2.18 грн до 23.73 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN62D0U-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A |
на замовлення 105694 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
DMN62D0U-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 380MA SOT23Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 380mW (Ta) |
на замовлення 96419 шт: термін постачання 21-31 дні (днів) |
|
| DMN62D0U-13 |
![]() |
Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A
на замовлення 105694 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 26+ | 12.96 грн |
| 58+ | 5.66 грн |
| 100+ | 3.23 грн |
| 1000+ | 2.74 грн |
| 2500+ | 2.46 грн |
| 10000+ | 2.32 грн |
| 20000+ | 2.18 грн |
| DMN62D0U-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
на замовлення 96419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.73 грн |
| 20+ | 15.47 грн |
| 100+ | 7.56 грн |
| 500+ | 5.92 грн |
| 1000+ | 4.11 грн |
| 2000+ | 3.57 грн |
| 5000+ | 3.25 грн |


