DMN62D0UDWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.64 грн |
| 30000+ | 6.32 грн |
| 50000+ | 5.37 грн |
| 100000+ | 4.96 грн |
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Технічний опис DMN62D0UDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363, Part Status: Active, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 320mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції DMN62D0UDWQ-13 за ціною від 6.67 грн до 34.81 грн
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DMN62D0UDWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.35A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 320mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 268288 шт: термін постачання 21-31 дні (днів) |
|
| DMN62D0UDWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 268288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 13+ | 23.69 грн |
| 100+ | 11.97 грн |
| 500+ | 9.96 грн |
| 1000+ | 7.75 грн |
| 2000+ | 6.93 грн |
| 5000+ | 6.67 грн |