DMN62D0UV-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.49A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 470mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Технічний опис DMN62D0UV-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.49A SOT563, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 490mA (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 470mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції DMN62D0UV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN62D0UV-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V SOT563 T&R 10K |
товару немає в наявності |

