DMN62D0UWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Кількість | Ціна |
|---|---|
| 10000+ | 4.38 грн |
| 30000+ | 4.14 грн |
| 50000+ | 3.43 грн |
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Технічний опис DMN62D0UWQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323, Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 320mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції DMN62D0UWQ-13 за ціною від 3.66 грн до 31.26 грн
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DMN62D0UWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 340MA SOT323 Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Packaging: Cut Tape (CT) |
на замовлення 226920 шт: термін постачання 21-31 дні (днів) |
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DMN62D0UWQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
на замовлення 19500 шт: термін постачання 21-30 дні (днів) |
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| DMN62D0UWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 340MA SOT323
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Packaging: Cut Tape (CT)
на замовлення 226920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 16+ | 19.81 грн |
| 100+ | 10.02 грн |
| 500+ | 7.67 грн |
| 1000+ | 5.69 грн |
| 2000+ | 4.79 грн |
| 5000+ | 4.50 грн |
| DMN62D0UWQ-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V-40V
MOSFET MOSFET BVDSS: 31V-40V
на замовлення 19500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.26 грн |
| 15+ | 22.56 грн |
| 100+ | 9.14 грн |
| 1000+ | 5.70 грн |
| 2500+ | 4.92 грн |
| 10000+ | 4.15 грн |
| 20000+ | 3.66 грн |