DMN62D1LFDQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA 3DFN T&R 3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 6.79 грн |
| 6000+ | 5.93 грн |
| 9000+ | 5.63 грн |
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Технічний опис DMN62D1LFDQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 400MA 3DFN T&R 3, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN1212-3 (Type C), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DMN62D1LFDQ-7 за ціною від 6.08 грн до 32.26 грн
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DMN62D1LFDQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 400MA 3DFN T&R 3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Grade: Automotive Supplier Device Package: U-DFN1212-3 (Type C) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DMN62D1LFDQ-7 | Виробник : Diodes Incorporated |
MOSFETs 2N7002 Family |
на замовлення 17873 шт: термін постачання 21-30 дні (днів) |
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