DMN62D1SFB-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 410MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.51 грн |
| 20000+ | 4.87 грн |
| 30000+ | 4.65 грн |
| 50000+ | 4.14 грн |
| 70000+ | 4.04 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN62D1SFB-7B Diodes Incorporated
Description: MOSFET N-CH 60V 410MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 470mW (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN62D1SFB-7B за ціною від 4.50 грн до 32.44 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN62D1SFB-7B | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
на замовлення 55949 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
DMN62D1SFB-7B | Diodes Incorporated |
Description: MOSFET N-CH 60V 410MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V |
на замовлення 18812537 шт: термін постачання 21-31 дні (днів) |
|
| DMN62D1SFB-7B |
![]() |
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
на замовлення 55949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.17 грн |
| 23+ | 14.07 грн |
| 100+ | 8.02 грн |
| 500+ | 6.33 грн |
| 1000+ | 5.70 грн |
| 10000+ | 4.50 грн |
| DMN62D1SFB-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 410MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V
Description: MOSFET N-CH 60V 410MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V
на замовлення 18812537 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 16+ | 19.05 грн |
| 100+ | 12.08 грн |
| 500+ | 8.48 грн |
| 1000+ | 7.56 грн |
| 2000+ | 6.79 грн |
| 5000+ | 5.85 грн |


