DMN63D8LDWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.22A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 3000+ | 4.76 грн |
| 6000+ | 4.25 грн |
| 9000+ | 3.53 грн |
| 30000+ | 3.25 грн |
| 75000+ | 2.92 грн |
| 150000+ | 2.53 грн |
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Технічний опис DMN63D8LDWQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.22A SOT363, Part Status: Not For New Designs, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 300mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції DMN63D8LDWQ-7 за ціною від 2.37 грн до 28.28 грн
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DMN63D8LDWQ-7 | Виробник : Diodes Incorporated |
MOSFETs Dual N-Ch Enh FET 30Vdss 20Vdss 800mA |
на замовлення 47727 шт: термін постачання 21-30 дні (днів) |
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DMN63D8LDWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.22A SOT363 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Current - Continuous Drain (Id) @ 25°C: 220mA Drain to Source Voltage (Vdss): 30V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 803809 шт: термін постачання 21-31 дні (днів) |
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